Silicon carbide semiconductor device

A silicon carbide semiconductor device, including

• an active region through which main current flows,
• a termination region surrounding a periphery of the active region, and
• a border region between the active region and the termination region, and surrounding the periphery of the active region,
• the silicon carbide semiconductor device comprising:
• a semiconductor substrate having a first main surface and a second main surface, the semiconductor substrate including
• a first epitaxial layer of a first conductivity type, and
• a second epitaxial layer of a second conductivity type, the second epitaxial layer forming the first main surface of the semiconductor substrate, and including
• a first semiconductor region of the first conductivity type, selectively provided in a surface layer of the second epitaxial layer, at a side of the first main surface, in the active region,
• a second semiconductor region of the second conductivity type, selectively provided in the surface layer of the second epitaxial layer, at the side of the first main surface, in the border region, the second semiconductor region having an impurity concentration that is higher than that of the second epitaxial layer, and
• a third semiconductor region constituted by the second epitaxial layer excluding the first semiconductor region and the second semiconductor region;
• a trench penetrating the first semiconductor region and the third semiconductor region, and reaching the first epitaxial layer;
• a gate electrode provided in the trench, via a gate insulating film;
• a first electrode electrically connected to the first semiconductor region and the third semiconductor region;
• and
• a second electrode provided at the second main surface of the semiconductor substrate, wherein
• the second semiconductor region is separate from the first semiconductor region, and
• a portion of the third semiconductor region is exposed at the first main surface of the semiconductor substrate, between the second semiconductor region and the first semiconductor region.