Semiconductor devices and methods for forming semiconductor devices

A semiconductor device comprising:

• a source region of a field effect transistor having a first conductivity type;
• a body region of the field effect transistor having a second conductivity type;
• and
• a drain region of the field effect transistor having the first conductivity type and having a buried portion;
• and
• wherein the source region, the drain region, and the body region are located in a semiconductor substrate of the semiconductor device,
• wherein at least a part of the body region is located between the source region and the drain region,
• wherein the drain region extends from the body region to a drain contact portion of the drain region located at a surface of the semiconductor substrate,
• wherein the buried portion of the drain region is located beneath a spacer region comprising an electrically insulating material, wherein the spacer region is located in a trench extending into the semiconductor substrate,
• wherein a length of a shortest current path between the body region and a drain contact interface between the drain contact portion of the drain region and a drain wiring structure is at least 1.5 times a minimal distance between the body region and the drain contact interface.

A method for forming a semiconductor device, the method comprising:

• forming a drain region of a field effect transistor of the semiconductor device having a first conductivity type and having a buried portion;
• forming a body region of the field effect transistor having a second conductivity type;
• and
• forming a source region of the field effect transistor having the first conductivity type,
• wherein the source region, the drain region, and the body region are positioned in a semiconductor substrate of the semiconductor device,
• wherein the body region is positioned between the source region and the drain region,
• wherein the drain region extends from the body region to a drain contact portion of the drain region, the drain contact portion positioned at a surface of the semiconductor substrate, wherein a current path of the field effect transistor extends in the drain region from the body region through the buried portion to the drain contact portion,
• wherein the buried portion of the drain region is positioned beneath a spacer doping region, wherein the spacer doping region is positioned within the semiconductor substrate,
• wherein the spacer doping region and the body region are portions of a well doping region having the second conductivity type.