Semiconductor device having capacitor and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMeng-Han Lin, Te-Hsin Chiu, Wei Cheng Wu, Te-An Chen
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Abstract
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device has a substrate having isolation structures therein and a capacitor structure located on a top surface of the isolation structure. The capacitor structure comprises a semiconductor material pattern and an insulator pattern inlaid in the semiconductor material pattern. The semiconductor material pattern and the insulator pattern are located at a same horizontal level on the isolation structure.
Claims20
A semiconductor device, comprising:
- a substrate having isolation structures therein;
- a capacitor structure located on a top surface of the isolation structure, wherein the capacitor structure comprises a semiconductor material pattern and an insulator pattern inlaid in the semiconductor material pattern, wherein the semiconductor material pattern and the insulator pattern are located at a same horizontal level on the isolation structure.
A semiconductor device, comprising:
- a substrate having isolation structures therein;
- a capacitor structure located on a top surface of the isolation structure, wherein the capacitor structure comprises a semiconductor material pattern and an insulator pattern filled in the semiconductor material pattern, wherein the semiconductor material pattern and the insulator pattern are in contact with the top surface of the isolation structure, and an interface of the semiconductor material pattern and the insulator pattern is substantially perpendicular to the top surface of the isolation structure.
A method of manufacturing a semiconductor device, comprising:
- forming an isolation structure in a substrate to define an isolating region;
- forming a semiconductor material pattern on the isolation structure;
- forming a lightly doped portion with a first doping concentration in the semiconductor material pattern by performing a first ion implantation process to the semiconductor material pattern in the isolating region;
- forming at least one heavily doped portion in the semiconductor material pattern by performing a second ion implantation process to the semiconductor material pattern in the isolating region, wherein the at least one heavily doped portion has a doping concentration higher than the first doping concentration;
- and
- forming an insulator material layer over the substrate covering the semiconductor material pattern in the isolating region, wherein the insulator material layer at least fills up a gap of the semiconductor material pattern.
Dependencies are inferred from the claim text.