Novel resistive random access memory device

A memory device, comprising:

• a first selector material formed on a substrate presenting a first U-shaped profile;
• a second selector material formed on the first selector material presenting a second U-shaped profile;
• a first conductor extending in parallel with a first horizontal axis, wherein the first conductor's sidewalls and lower boundary are partially embedded in the second U-shaped profile;
• a first variable resistive material comprising a portion disposed along a first sidewall portion of the first selector material;
• a second variable resistive material comprising a portion disposed along a second sidewall portion of the first selector material;
• a second conductor, disposed along the portion of the first variable resistive material, that extends in parallel with a vertical axis;
• and
• a third conductor, disposed along the portion of the second variable resistive material, that also extends in parallel with the vertical axis.

A memory device, comprising:

• a first conductor extending in parallel with a first axis;
• a first selector material partially surrounds the first conductor;
• a second selector material partially surrounds the first selector material;
• a first variable resistive material comprising a portion that extends along respective first sidewall portions of the first and second selector materials;
• a second variable resistive material comprising a portion that extends along respective second sidewall portions of the first and second selector materials;
• a second conductor extending in parallel with a second axis substantially perpendicular to the first axis;
• and
• third conductor also extending in parallel with the second axis,
• wherein the first and second sidewall portions of the first selector material, the first and second potions of the second selector material, and the portions of the first and second variable resistive materials are respectively mirror symmetric over the first conductor.