Tuning Tensile Strain on FinFET

A semiconductor structure comprising:

• a semiconductor substrate;
• a first channel region in the semiconductor substrate;
• first source/drain regions in the semiconductor substrate on opposing sides of the first channel region;
• a first gate over the first channel region;
• a contracted dielectric disposed over the first source/drain regions;
• and
• first spacers interposed between the first gate and the contracted dielectric, the first spacers having a concave surface extending toward the contracted dielectric.

A semiconductor structure comprising:

• a first device comprising:
• a first fin;
• first source/drain regions in the first fin on opposing sides of a first channel region;
• and
• a first gate electrode overlying the first channel region;
• and
• a first interlayer dielectric layer on opposing sides of the first gate electrode, the first interlayer dielectric layer being a contracted dielectric layer, the first gate electrode having convex sidewalls projecting toward concave sidewalls of the first interlayer dielectric layer.