Three-dimensional integrated circuit structures and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJie Chen, Hsien-Wei Chen
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Abstract
Three-dimensional integrated circuit structures are disclosed. A three-dimensional integrated circuit structure includes a first die, a second die and a device-free die. The first die includes a first device. The second die includes a second device and is bonded to the first die. The device-free die is located aside the second die and is bonded to the first die. The device-free die includes a conductive feature electrically connected to the first die and the second die.
Claims20
A three-dimensional integrated circuit structure, comprising:
- a first die comprising a first device;
- a second die comprising a second device and bonded to the first die;
- and
- a device-free die located aside the second die and bonded to the first die, wherein the device-free die comprises a conductive feature electrically connected to the first die and the second die.
A method of forming a three-dimensional integrated circuit structure, comprising:
- providing a first die;
- bonding a second die to the first die by a hybrid bonding comprising a metal-to-metal bonding and a dielectric-to-dielectric bonding;
- bonding a dummy die having a plurality of through substrate vias to the first die by another hybrid bonding comprising a metal-to-metal bonding and a dielectric-to-dielectric bonding;
- forming a dielectric encapsulation over the first die and around the second die and the dummy die;
- and
- forming a redistribution layer structure over the second die and the dummy die, the redistribution layer structure electrically connected to the through substrate vias of the dummy die.
A three-dimensional integrated circuit structure, comprising:
- a first device die comprising a first semiconductor substrate and a first bonding structure over the first semiconductor substrate;
- a second device die comprising a second semiconductor substrate and a second bonding structure over the second semiconductor substrate, wherein the second device die is electrically coupled to the first device die by the second bonding structure and the first bonding structure;
- and
- a dummy die comprising a third semiconductor substrate, a plurality of first through vias within the third semiconductor substrate, and a third bonding structure over the third semiconductor structure and electrically connected to the plurality of first through vias, wherein the dummy die is electrically coupled to the first device die by the third bonding structure and the first bonding structure.
Dependencies are inferred from the claim text.