Stress Reduction Apparatus and Method

A method comprising:

• depositing a polymer layer over a substrate of a first semiconductor die;
• forming an under bump metallization structure over the polymer layer;
• forming a connector over the under bump metallization structure;
• forming a first dummy conductive plane over the polymer layer, wherein a long edge of the first dummy conductive plane is collinear with a first edge of the first semiconductor die in a plan view, wherein a bottommost surface of the first dummy conductive plane is above a bottommost surface of the connector, and wherein a topmost surface of the first dummy conductive plane is below a topmost surface of the connector;
• and
• forming a second dummy conductive plane over the polymer layer, wherein a long edge of the second dummy conductive plane is collinear with a second edge of the first semiconductor die in the plan view.

A method comprising:

• depositing a polymer layer over a substrate of a first semiconductor die;
• forming a connector over the polymer layer;
• forming an L-shaped dummy conductive region over the polymer layer, wherein a long edge of the L-shaped dummy conductive region is collinear with an edge of the first semiconductor die in a plan view, wherein a topmost surface of the L-shaped dummy conductive region is below a topmost surface of the connector;
• and
• bonding a second semiconductor die to the first semiconductor die, wherein the second semiconductor die is electrically coupled to the first semiconductor die through the connector.