Fan-Out Package with Cavity Substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Hao Tsai, Techi Wong, Po-Yao Chuang, Shin-Puu Jeng, Meng-Wei Chou, Meng-Liang Lin
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Abstract
Structures and methods of forming fan-out packages are provided. The packages described herein may include a cavity substrate, one or more semiconductor devices located in a cavity of the cavity substrate, and one or more redistribution structures. Embodiments include a cavity preformed in a cavity substrate. Various devices, such as integrated circuit dies, packages, or the like, may be placed in the cavity. Redistribution structures may also be formed.
Claims20
A method of forming a semiconductor structure, the method comprising:
- placing a semiconductor device in a cavity of a cavity substrate;
- after placing the semiconductor device in the cavity, forming a molding compound along sidewalls of the semiconductor device;
- and
- forming a redistribution structure over the cavity substrate, the molding compound, and the semiconductor device.
A method of forming a semiconductor structure, the method comprising:
- forming a first redistribution structure over a carrier substrate;
- attaching a first semiconductor device to the first redistribution structure;
- attaching a cavity substrate to the first redistribution structure;
- forming a molding compound between sidewalls of the cavity substrate and sidewalls of the first semiconductor device;
- and
- electrically coupling a second semiconductor device to the cavity substrate, wherein the cavity substrate is electrically interposed between the second semiconductor device and the first redistribution structure.
A semiconductor structure comprising:
- a cavity substrate, the cavity substrate comprising conductors extending from a first side of the cavity substrate to a second side of the cavity substrate;
- a first semiconductor device;
- a molding compound extending between sidewalls of the first semiconductor device and sidewalls of the cavity substrate;
- and
- a first redistribution structure over the molding compound, the first semiconductor device, and the cavity substrate.
Dependencies are inferred from the claim text.