Semiconductor devices

A semiconductor device, comprising:

• a first conductive pattern contained at an upper portion of a first insulating interlayer on a first substrate;
• a first plurality of carbon nanotubes (CNTs) on a first recess on an upper surface of the first conductive pattern, each of the first plurality of CNTs extending in a vertical direction relative to an upper surface of the first substrate;
• a second conductive pattern contained at a lower portion of a second insulating interlayer beneath a second substrate, a lower surface of the second insulating interlayer contacting an upper surface of the first insulating interlayer;
• and
• a second plurality of CNTs beneath a second recess beneath a lower surface of the second conductive pattern, each of the second plurality of CNTs extending in the vertical direction,
• wherein the first and second conductive patterns face each other in the vertical direction, wherein a top surface of at least one of the first plurality of CNTs is spaced apart from the second conductive pattern and at least one of the first plurality of CNTs and at least one of the second plurality of CNTs contact each other.

A semiconductor device, comprising:

• a first conductive pattern;
• a first plurality of carbon nanotubes (CNTs) extending through the first conductive pattern in a vertical direction, each of the first plurality of CNTs protruding from an upper surface of the first conductive pattern;
• a second conductive pattern;
• and
• a second plurality of CNTs extending through the second conductive pattern in the vertical direction, each of the second plurality of CNTs protruding from a lower surface of the second conductive pattern,
• wherein an upper portion of at least one of the first plurality of CNTs and a lower portion of at least one of the second plurality of CNTs contact each other.