Local interconnect for group iv source/drain regions

An integrated circuit, comprising:

• a fin structure comprising silicon (Si);
• a gate structure over at least a portion of the fin structure;
• a source or drain region adjacent the portion of the fin structure under the gate structure, the source or drain region comprising germanium (Ge);
• an insulator material over the source or drain region;
• and
• a local interconnect structure in the insulator material and in direct contact with the source or drain region, the local interconnect structure including an alloy including both a metal and a Group IV semiconductor material, wherein the local interconnect structure is a continuous body of the alloy.

An integrated circuit, comprising:

• one or more nanowires or nanoribbons comprising silicon;
• a gate structure wrapped around the one or more nanowires or nanoribbons;
• a source or drain region adjacent the one or more nanowires or nanoribbons, the source or drain region comprising germanium (Ge);
• an insulator material over the source or drain region;
• and
• a local interconnect structure in the insulator material and in direct contact with the source or drain region, the local interconnect structure including an alloy including both a metal and a Group IV semiconductor material, wherein the local interconnect structure is a continuous body of the alloy.