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US 2020/0006122 A1Published application
Integrated circuits (ics) made using extreme ultraviolet (euv) patterning and methods for fabricating such ics
AssigneeQUALCOMM Incorporated
InventorsMustafa Badaroglu, Kern Rim
Life of this patent
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Abstract
Integrated circuits (ICs) made using extreme ultraviolet (EUV) patterning and methods for fabricating such ICs are disclosed. In an exemplary aspect, fabricating such ICs includes using a double-exposure EUV process when making metal trenches for the ICs. In particular, after a first EUV exposure and etching process, spacers are used before a second EUV exposure to guarantee minimum spacing between the metal trenches.
Claims12
An integrated circuit (IC) comprising:
- a substrate;
- an active element disposed on a first side of the substrate;
- and
- a metal layer disposed above the active element on the first side of the substrate;
- wherein the metal layer comprises a metal trench, wherein the metal trench comprises a buffer zone and the buffer zone has a uniform outward dimension on two opposite sides of the metal trench.
2 more elements
An integrated circuit (IC) comprising:
- a means for supporting active elements;
- a means for performing a function disposed on a first side of the means for supporting the active elements;
- and
- a metal layer disposed above the means for performing the function on the first side of the means for supporting the active elements;
- wherein the metal layer comprises a metal trench, wherein the metal trench comprises a buffer zone and the buffer zone has a uniform outward dimension on two opposite sides of the metal trench.
2 more elements
12-22. (canceled)
Dependencies are inferred from the claim text.