Pattern forming material, pattern forming method, and method for manufacturing semiconductor device

A pattern forming method comprising:

• forming a film composed of a pattern forming material on a semiconductor substrate;
• and
• forming a mask pattern by patterning the film,
• wherein the pattern forming material containing a polymer composed of two or more kinds of monomer units including a first monomer unit and a second monomer unit,
• the first monomer unit in the monomer units being provided with an ester skeleton having a first carbonyl group and one or more second carbonyl groups which bind to the ester skeleton, and
• among the second carbonyl groups, the second carbonyl group that is farthest from a main chain of the polymer constituting the pattern forming material is present on a linear chain, and
• the second monomer unit in the monomer units being provided with a crosslinkable functional group on a side chain terminal.

A method for manufacturing a semiconductor device comprising:

• forming a film composed of a pattern forming material on a semiconductor substrate;
• and
• forming a mask pattern by patterning the film,
• wherein the pattern forming material containing a polymer composed of two or more kinds of monomer units including a first monomer unit and a second monomer unit,
• the first monomer unit in the monomer units being provided with an ester skeleton having a first carbonyl group and one or more second carbonyl groups which bind to the ester skeleton, and
• among the second carbonyl groups, the second carbonyl group that is farthest from a main chain of the polymer constituting the pattern forming material is present on a linear chain, and
• the second monomer unit in the monomer units being provided with a crosslinkable functional group on a side chain terminal.