Dielectric material and methods of forming same

A method, comprising:

• providing a substrate including a trench;
• depositing a liner layer conformally within the trench;
• and
• forming an isolation structure over the liner layer within the trench, wherein the isolation structure includes one of SiCON, SiCN, and SiCO, and wherein the forming the isolation structure comprises:
• flowing a Si precursor and a C precursor into a process chamber;
• and
• while flowing the Si precursor and the C precursor into the process chamber, pulsing a power of a plasma source to form the isolation structure.

A method, comprising:

• providing a gate structure over a substrate, wherein a channel region is disposed underlying the gate structure;
• forming a trench over the gate structure;
• and
• depositing a mask layer within the trench, wherein the mask layer is deposited in a chemical vapor deposition (CVD) process chamber including a plasma module, and wherein the depositing the mask layer includes flowing a Si precursor and a C precursor into CVD process chamber.