Channel layer formation for iii-v metal-oxide-semiconductor field effect transistors (mosfets)

A method for forming a semiconductor device, the method comprising:

• forming an insulator layer above a substrate;
• forming one or more seed components including a seed material with free surface above the insulator layer;
• relaxed growing from the one or more seed components a channel layer above the one or more seed components, above the insulator layer, and in contact with the insulator layer, wherein the channel layer includes an material;
• and
• patterning the channel layer into one or more channel areas.

A computing device, comprising:

• a processor;
• and
• a memory device coupled to the processor, wherein the memory device or the processor includes a transistor comprising:
• a substrate;
• an insulator layer above the substrate;
• a channel area including an III-V material relaxed grown on the insulator layer;
• a source area above the insulator layer, in contact with the insulator layer, and adjacent to a first end of the channel area;
• and
• a drain area above the insulator layer, in contact with the insulator layer, and adjacent to a second end of the channel area that is opposite to the first end of the channel area, wherein the source area or the drain area includes one or more seed components including a seed material with free surface.