Back to results
US 2020/0006064 A1Published application
Method And Apparatus For Deposition Of Low-K Films
AssigneeApplied Materials, Inc.
InventorsNing Li, Zhelin Sun, Mihaela Balseanu, Li-Qun Xia, Bhaskar Jyoti Bhuyan, Mark Saly
Life of this patent
Estimating the term…
Abstract
Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.
Claims18
A processing platform comprising:
- a central transfer station comprising a plurality of sides and a robot positioned therein;
- a batch processing chamber connected to a side of the central transfer station;
- a steam annealing chamber connected to a side of the central transfer station;
- and
- a controller coupled to the central transfer station, the batch processing chamber and the steam annealing chamber, the controller having one or more configurations selected from a first configuration to move a substrate to the batch processing chamber, a second configuration to provide a plurality of process gases to the batch processing chamber to deposit a film on the substrate in the batch processing chamber, a third configuration to move a substrate from the batch processing chamber to the steam annealing chamber, a fourth configuration to heat the steam annealing chamber to an annealing temperature, a fifth configuration to provide a flow of water vapor to the steam annealing chamber, or a sixth configuration to remove the substrate from the steam annealing chamber.
2 more elements
Dependencies are inferred from the claim text.