Method for programming a non-volatile memory device and corresponding non-volatile memory device

A method for programming a group of memory cells of a non-volatile memory device in a programming window that has a duration longer than a programming duration of a memory cell, the method comprising:

• subdividing the programming window into a plurality of time intervals;
• retrieving a programming profile that was determined by simulation while taking into account a reference criterion, the programming profile including, for each time interval, a maximum number of memory cells that can be triggered for programming within each time interval;
• and
• programming the memory device in the programming window, interval-wise, using the programming profile.

A non-volatile memory device comprising:

• a memory plane including memory cells;
• a register storing a programming profile that was determined by simulation while taking into account a reference criterion, the programming profile including, for each time interval of a number of time intervals in a programming window, a maximum number of memory cells that can be triggered for programming within each time interval;
• and
• a programming circuit configured to program a group of N memory cells in the programming window according to the programming profile.