Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory

A method, comprising:

• providing a read voltage to a first digit line and to a first plate of a capacitor coupled, via the first digit line, to a first sense node of a sense component;
• driving a voltage of a second digit line and a second plate of a capacitor coupled to a second sense node of the sense component;
• comparing at the sense component a voltage of the first sense node to a reference voltage;
• and
• driving the first and second sense nodes to a first and second voltages, respectively, based on the comparison.

An apparatus, comprising:

• a first digit line;
• a second digit line;
• a ferroelectric memory cell including a ferroelectric capacitor, a first selection component, and a second selection component, the first selection component coupled between the first digit line and a first plate of the ferroelectric capacitor and the second selection component coupled between the second digit line and a second plate of the ferroelectric capacitor;
• a first word line coupled to a gate of the first selection component;
• a second word line coupled to a gate of the second selection component;
• a restore switch configured to activate after the first digit line has received a read voltage;
• an isolation switch configured to deactivate responsive to the restore switch being activated after the first digit line has received the read voltage;
• a sense component including a first sense node coupled to the first digit line through a switch and further including a second sense node coupled to the second digit line through the isolation switch, the sense component configured to latch voltages of the first and second sense nodes;
• a reference switch coupled to the second sense node and, when the isolation switch is deactivated, configured to provide a constant reference voltage to the second sense node;
• a first driver circuit coupled to the first digit line and configured to provide the read voltage to the first digit line and the first sense node when restore switch is activated;
• and
• a second driver circuit coupled to the second digit line and, when the isolation switch is deactivated, configured to provide a ground voltage to the second digit line.