Multi-level storage in ferroelectric memory

An apparatus, comprising:

• a memory cell comprising a ferroelectric capacitor;
• a sense component in electronic communication with the memory cell through an access line;
• a first switching component in electronic communication with the access line and configured to isolate the sense component from the access line;
• and
• an equalization component in electronic communication with the access line and configured to initiate a voltage differential across the memory cell.

A method, comprising:

• transferring a dielectric charge from a memory cell to a sense component by applying a voltage to an access line coupled with the memory cell at a first time;
• isolating the sense component from the access line by deactivating a switching component coupled with the access line based at least in part on applying the voltage to the access line;
• removing the voltage from the access line based at least in part on deactivating the switching component;
• and
• transferring a polarization charge from the memory cell to the sense component by applying the voltage to the access line at a second time.

An apparatus, comprising:

• a memory cell;
• a sense component in electronic communication with the memory cell via an access line;
• a switching component in electronic communication with the sense component;
• a controller in electronic communication with the memory cell, the access line, and the sense component, wherein the controller is operable to:
• initiate transferring a dielectric charge from the memory cell to the sense component;
• isolate the sense component from the access line by deactivating the switching component coupled with the access line based at least in part on initiating transferring the dielectric charge from the memory cell to the sense component;
• and
• initiate transferring a polarization charge from the memory cell to the sense component.