Defect reduction in seeded aluminum nitride crystal growth
AssigneeCrystal IS, Inc.
InventorsRobert T. Bondokov, Leo J. Schowalter, Kenneth Morgan, Glen A. Slack, Shailaja P. Rao, Shawn Robert Gibb
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Abstract
Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
Claims22
-38. (canceled)
A bulk single crystal of AlN having a thickness greater than 0.1 mm and exhibiting a triple-crystal X-ray rocking curve of less than 50 arcsec full width at half maximum (FWHM) for a (0002) reflection.
A method of fabricating an optoelectronic device, the method comprising:
- providing a bulk single crystal of AlN having an areal planar defect density≤100 cm2;
- depositing over the bulk single crystal a plurality of epitaxial layers each comprising AlxGayIn1-x-yN, wherein 0≤x≤1 and 0≤y≤1−x;
- and
- processing the plurality of epitaxial layers to form a laser diode or light-emitting diode disposed over the bulk single crystal.
Dependencies are inferred from the claim text.