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US 2020/0002837 A1Published application
Methods for modeling the impurity concentration of a single crystal silicon ingot
AssigneeGlobalWafers Co., Ltd.
InventorsCarissima Marie Hudson, JaeWoo Ryu
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Abstract
Methods for forming single crystal silicon ingots in which plural sample rods are grown from the melt are disclosed. A parameter related to the impurity concentration of the melt or ingot is measured. In some embodiments, the sample rods each have a diameter less than the diameter of the product ingot.
Claims19
A method for modeling the impurity concentration of a single crystal silicon ingot, the method comprising:
- pulling a first sample rod from a silicon melt disposed in a crucible, the first sample rod having a first sample rod diameter of less than 100 mm;
- measuring a first sample rod parameter related to the impurity content of the first sample rod;
- pulling a second sample rod from the silicon melt, the second sample rod having a first sample rod diameter of less than 100 mm;
- measuring a second sample rod parameter related to the impurity content of the second sample rod;
- determining the impurity concentration of a single crystal silicon ingot based at least in part on the measured first sample rod parameter and the measured second sample rod parameter.
2 more elements
Dependencies are inferred from the claim text.