Methods for determining the resistivity of a polycrystalline silicon melt
AssigneeGlobalWafers Co., Ltd.
InventorsCarissima Marie Hudson, JaeWoo Ryu, Richard J. Phillips, Robert Standley, HyungMin Lee, YoungJung Lee
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Abstract
Methods for forming single crystal silicon ingots with improved resistivity control. The methods involve growth and resistivity measurement of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The resistivity of the sample rod may be measured directly by contacting a resistivity probe with a planar segment formed on the sample rod. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.
Claims19
A method for determining the resistivity of a polycrystalline silicon melt held within a crucible, the method comprising:
- pulling a sample rod from the melt;
- annealing the sample rod in a thermal donor kill cycle;
- applying a current to the sample rod;
- and
- contacting the sample rod with a resistivity probe while applying current to the sample rod to measure the resistivity of the rod.
Dependencies are inferred from the claim text.