Electrode contacts

A device structure comprising:

• a material structure including a top surface and a side wall integral with and joining the top surface;
• at least one material layer deposited on the material structure, the at least one material layer being continuous on the top surface of the material structure, continuously covering a first portion of the side wall, and having at least one discontinuity on a second portion of the side wall;
• and
• a first conductive layer deposited on the at least one material layer, the first conductive layer in contact with the material structure on the second portion of the side wall and separated from the material structure by the at least one material layer on the first portion of the side wall, the at least one material layer comprising material different from a material of the first conductive layer.

A method of fabricating a device structure, the method comprising:

• fabricating a material structure including a top surface and a side wall integral with and joining the top surface;
• depositing at least one material layer on the material structure, the at least one material layer being continuous on the top surface of the material structure, continuously covering a first portion of the side wall, and having at least one discontinuity on a second portion of the side wall;
• and
• depositing a first conductive layer on the at least one material layer, the first conductive layer in contact with the material structure on the second portion of the side wall and separated from the material structure by the at least one material layer on the first portion of the side wall, the at least one material layer comprising material different from a material of the first conductive layer.