Field-effect transistor, method for manufacturing the same, and wireless communication device and goods tag including the same

A field-effect transistor comprising at least:

• a substrate;
• a source electrode;
• a drain electrode;
• a gate electrode;
• a semiconductor layer in contact with the source electrode and with the drain electrode;
• and
• a gate insulating layer insulating between the semiconductor layer and the gate electrode,
• the semiconductor layer comprising an organic semiconductor and/or a carbon material, and
• the gate insulating layer comprising at least a polysiloxane having a structural unit represented by a general formula (1):
• in the general formula (1), R1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group;
• R2 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or a silyl group;
• m represents 0 or 1;
• A1 represents an organic group including at least two groups selected from a carboxy group, a sulfo group, a thiol group, a phenolic hydroxy group, or a derivative of these groups;
• when the derivative is a cyclic condensed structure formed by two groups out of the carboxy group, the sulfo group, the thiol group, and the phenolic hydroxy group, A1 represents an organic group having at least one the cyclic condensed structure.