Ferroelectric strain based phase-change device

A transistor device comprising:

• a substrate or a thin film of a ferroelectric material having a first surface and a second surface;
• a gate terminal electrically coupled to and disposed on said second surface;
• and
• a section of a transition metal dichalcogenide disposed over and in contact with said substrate or said thin film, said section of a transition metal dichalcogenide having a source terminal at a first end of said section of a transition metal dichalcogenide and a drain terminal at a second end of said section of a transition metal dichalcogenide, said section of a transition metal dichalcogenide having a semiconducting state and a semimetallic state, said semiconducting state or said semimetallic state selectable by applying a voltage between said gate terminal and said source terminal or between said gate terminal and said drain terminal to induce a strain in said transition metal dichalcogenide via said ferroelectric material.

An integrated memory device comprising:

• a substrate or a thin film of a ferroelectric material having a first surface and a second surface;
• a plurality of non-volatile transistor devices which remain in a previously selected state in an absence of electrical power, each non-volatile transistor device comprising:
• a gate terminal electrically coupled to and disposed on said second surface;
• and
• a section of a transition metal dichalcogenide disposed over and in contact with said substrate or said thin film, said section of a transition metal dichalcogenide having a source terminal at a first end of said section of a transition metal dichalcogenide and a drain terminal at a second end of said section of a transition metal dichalcogenide, said section of a transition metal dichalcogenide having a semiconducting state and a semimetallic state, said semiconducting state or said semimetallic state selectable by applying a voltage between said gate terminal and said source terminal or between said gate terminal and said drain terminal to induce a strain in said transition metal dichalcogenide via said ferroelectric material.