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US 2019/0378974 A1Published application
Magnetoresistance effect element
AssigneeTDK Corporation
InventorsTomoyuki SASAKI, Katsuyuki NAKADA, Tatsuo SHIBATA
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Abstract
A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox(0<x≤4), and an A-site is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium.
Claims7
A magnetoresistance effect element comprising:
- a first ferromagnetic metal layer;
- a second ferromagnetic metal layer;
- and
- a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers,
- wherein the tunnel barrier layer has a spinel structure comprising a divalent cation and a trivalent cation in a unit cell wherein a concentration of constituent elements of the divalent cation in the unit cell is more than half a concentration of constituent elements of the trivalent cation in the unit cell, and
- wherein the divalent cation is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium,
- wherein the tunnel barrier layer comprises:
- at least one lattice-matched portion that is lattice-matched with both of the first ferromagnetic metal layer and the second ferromagnetic metal layer;
- and at least one lattice-mismatched portion that is not lattice-matched with at least one of the first ferromagnetic metal layer and the second ferromagnetic metal layer.
6 more elements
Dependencies are inferred from the claim text.