Perpendicular spin transfer torque memory (psttm) devices with enhanced perpendicular anisotropy and methods to form same

A method of fabricating a material layer stack for a non-volatile memory device, the method comprising:

• forming a bottom electrode layer;
• forming a fixed magnetic layer;
• forming a tunnel barrier on fixed magnetic layer;
• forming a storage layer, wherein forming a storage layer further comprises forming a first free layer on the tunnel barrier, forming a coupling layer on the first free layer, forming a second free layer on the coupling layer, forming a stack of bilayers in one of the first free layer or the second free layer, wherein each of the bilayer stacks further comprises forming a non-magnetic layer on a magnetic layer and capping an uppermost bilayer stack with the magnetic layer;
• forming a conductive oxide layer on the coupling layer;
• forming a protective layer on the conductive oxide layer;
• forming a conductive capping directly on the protective layer;
• forming a top electrode layer on the conductive capping layer.