Magnetoresistive random access memory
AssigneeUnited Microelectronics Corp.
InventorsChung-Liang Chu, Jian-Cheng Chen, Yu-Ping Wang, Yu-Ruei Chen
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Abstract
A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, a gap between the array region and the ring of MTJ region, and metal interconnect patterns overlapping part of the ring of MTJ region. Preferably, the ring of MTJ region further includes a first MTJ region and a second MTJ region extending along a first direction and a third MTJ region and a fourth MTJ region extending along a second direction.
Claims17
A semiconductor device, comprising:
- a substrate having an array region defined thereon;
- a ring of magnetic tunneling junction (MTJ) region surrounding the array region;
- and
- metal interconnect patterns overlapping part of the ring of MTJ region.
A semiconductor device, comprising:
- a substrate having an array region defined thereon;
- a first ring of magnetic tunneling junction (MTJ) region surrounding the array region;
- a second ring of MTJ region surrounding the first ring of MTJ region;
- and
- a third ring of MTJ region surrounding the second ring of MTJ region.
Dependencies are inferred from the claim text.