Optoelectronic component and method of manufacturing an optoelectronic component

An optoelectronic component comprising:

• a semiconductor layer sequence having an active region that emits radiation during operation at least via a main radiation exit surface, and
• a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence,
• wherein the self-supporting conversion element comprises a substrate and a first layer,
• the first layer comprises at least one conversion material embedded in a glass matrix,
• the glass matrix has a proportion of 50 to 80 vol. % in the first layer,
• the substrate is free of the glass matrix and the conversion material and mechanically stabilizes the first layer, and
• the first layer has a layer thickness of less than 200 μm.

An optoelectronic component comprising:

• a semiconductor layer sequence having an active region that emits radiation during operation at least via a main radiation exit surface, and
• a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence,
• wherein the self-supporting conversion element comprises a substrate and a first layer,
• the first layer comprises at least one conversion material embedded in a glass matrix,
• the glass matrix has a proportion of 50 to 80 vol. % in the first layer,
• the substrate is free of the glass matrix and the conversion material and mechanically stabilizes the first layer,
• the first layer has a layer thickness of less than 200 μm, and
• a surface of the first layer facing away from the substrate is smoothed.