Device and Method for III-V Light Emitting Micropixel Array Device Having Hydrogen Diffusion Barrier Layer

A light emitting micropixel array structure comprising:

• a plurality of multi-layer semiconductor light emitting structures, each multi-layer semiconductor light emitting structure comprising:
• a first layer having a first composition,
• a second layer having a second composition,
• at least one multiple quantum well active region between the first and second layers, and
• a first hydrogen barrier layer on the first layer for isolating hydrogen from the multi-layer semiconductor light emitting structure;
• and
• a second hydrogen barrier layer on each multi-layer semiconductor light emitting structure and abutting sidewalls of the multi-layer semiconductor light emitting structure to prevent or minimize the diffusion of hydrogen into the multi-layer semiconductor light emitting structure.

A multi-layer semiconductor light emitting structure comprising:

• a first region having a first composition;
• a second region having a second composition;
• at least one multiple quantum well active region between the first and second regions;
• at least one hydrogen barrier layer on the first region;
• a sidewall pixel contact cap that extends into the first region;
• and
• a plurality of contact vias that electrically couple the sidewall pixel contact cap to a contact metal rail;
• wherein the first region is completely enveloped or encapsulated by either (i) the at least one hydrogen barrier layer, or (ii) by the sidewall pixel contact cap and the contact vias, thereby preventing or minimizing a hydrogen penetration into the first region of the multi-layer semiconductor light emitting structure.