Light-emitting element, method of manufacturing the same and display device comprising light-emitting element

A light-emitting element comprising:

• a first semiconductor layer;
• an active layer on the first semiconductor layer;
• a second semiconductor layer on the active layer;
• and
• an insulating film surrounding side surfaces of the first semiconductor layer, the active layer, and the second semiconductor layer,
• wherein the active layer comprises at least one of GaInP, AlGaInP, GaAs, AlGaAs, InP, or InAs, and
• wherein a lower end of the insulating film protrudes to extend beyond a lower surface of the first semiconductor layer.

A display device comprising:

• a base substrate;
• a first electrode and a second electrode spaced apart from each other on the base substrate;
• a first contact electrode on an upper surface of the first electrode;
• a second contact electrode on an upper surface of the second electrode;
• and
• at least one light-emitting element between the first electrode and the second electrode,
• wherein respective side surfaces of the light-emitting element contact the first contact electrode and the second contact electrode, and have a flat shape to be substantially perpendicular to the base substrate,
• wherein the light-emitting element comprises a first semiconductor layer, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and an insulating film surrounding side surfaces of the first semiconductor layer, the active layer, and the second semiconductor layer,
• wherein the active layer comprises at least one of GaInP, AlGaInP, GaAs, AlGaAs, InP, or InAs, and
• wherein a lower end of the insulating film protrudes downward from a lower surface of the first semiconductor layer.