Enabling low-cost iii-v/si integration through nucleation of gap on v-grooved si substrates
AssigneeAlliance for Sustainable Energy, LLC
InventorsEmily Lowell Warren, William Edwin McMahon, Adele Clare Tamboli, Emily Anne Makoutz, Jeramy David Zimmerman
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Abstract
Disclosed herein are materials and methods useful for growth of III-V materials on Si that result in the reduction of costs for manufacturing III-V PV.
Claims21
A method for patterning and etching an unpolished silicon substrate that is capable of III-V epitaxial growth.
A method for epitaxial growth of a III-V material on an unpolished silicon substrate comprising patterning v-grooves on the silicon substrate;
- and
- treating the silicon substrate with AsH3;
- and
- epitaxially growing a III-V material on {001} and {111} surfaces of the silicon substrate.
A method for making solar cells comprising epitaxial growth of a III-V material on an unpolished silicon substrate comprising patterning v-grooves and etching.
Dependencies are inferred from the claim text.