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US 2019/0378940 A1Published application
Transparent electrode, manufacturing method thereof and electronic device employing the transparent electrode
AssigneeKabushiki Kaisha Toshiba
InventorsNaomi SHIDA, Katsuyuki NAITO, Mitsunaga SAITO, Takeshi NIIMOTO
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Abstract
The present embodiments provide a transparent electrode having a laminate structure of: a first metal oxide layer having an amorphous structure and electroconductivity, a metal layer made of a metallic material containing silver or copper, a second metal oxide layer having an amorphous structure and electroconductivity, and a third metal oxide layer having an amorphous structure and continuity, stacked in this order.
Claims10
1-18:
- (canceled)
19:
- A method for manufacturing an electronic device, the method comprising:
- (I) preparing a transparent substrate,
- (II) preparing a laminate structure of
- a first metal oxide layer having an amorphous structure and electroconductivity,
- a metal layer which comprises a metallic material containing silver or copper, and
- a second metal oxide layer having an amorphous structure and electroconductivity,
- on said transparent substrate,
- (III) forming a third metal oxide layer having an amorphous structure and continuity on a surface of said second metal oxide layer,
- (IV) forming a photoelectric conversion layer on a surface of said third metal oxide layer, and
- (V) forming a counter electrode on a surface of said photoelectric conversion layer.
7 more elements
20:
- The method according to claim 19, further comprising:
- (IIIa) forming a graphene layer which is placed in direct contact with said third metal oxide layer before or after the forming (III).
21:
- The method according to claim 19, further comprising forming a charge buffer layer or a charge transport layer between said photoelectric conversion layer and said third metal oxide layer or between said photoelectric conversion layer and said counter electrode.
22:
- The method according to claim 19, wherein the forming (III) comprises coating a metal alkoxide solution on the surface of said second metal oxide layer and drying.
23:
- The method according to claim 20, wherein the forming (IIIa) comprises coating an aqueous solution of graphene oxide to form a coated film and then treating said coated film with hydrazine hydrate to form said graphene layer.
24:
- The method according to claim 20, wherein the forming (IIIa) comprises forming said graphene layer on a copper foil by a CVD process and then transferring said graphene layer.
25:
- The method according to claim 19, wherein said counter electrode is formed by lamination in the forming (V).
26:
- The method according to claim 22, wherein said metal alkoxide solution further comprises other ion having a valence different from a metal constituting said metal oxide.
27:
- The method according to claim 19, further comprising:
- forming a UV-cut layer or a gas-barrier layer.