Back to results
US 2019/0378933 A1Published application
Oxide semiconductor film, thin film transistor, oxide sintered body and sputtering target
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKazuyoshi INOUE, Masatoshi SHIBATA
Life of this patent
Estimating the term…
Abstract
An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios of 0.01≤Ga/(In+Ga+Sn)≤0.30 . . . (1), 0.01≤Sn/(In+Ga+Sn)≤0.40 . . . (2), and 0.55≤In/(In+Ga+Sn)≤0.98 . . . (3), and a rare-earth element X at an atomic ratio of 0.03≤X/(In+Ga+Sn+X)≤0.25 . . . (4).
Claims16
An oxide semiconductor film comprising In, Ga, and Sn at respective atomic ratios of:
- 0.01≤Ga/(In+Ga+Sn)≤0.30 (1);
- 0.01≤Sn/(In+Ga+Sn)≤0.40 (2);
- and
- 0.55≤In/(In+Ga+Sn)≤0.98 (3), and
- a rare-earth element X at an atomic ratio of
- 0.03≤X/(In+Ga+Sn+X)≤0.25 (4).
3 more elements
A sintered oxide comprising In, Ga, and Sn at respective atomic ratios of:
- 0.01≤Ga/(In+Ga+Sn)≤0.30 (5);
- 0.01≤Sn/(In+Ga+Sn)≤0.40 (6);
- and
- 0.55≤In/(In+Ga+Sn)≤0.98 (7), and
- a rare-earth element X at an atomic ratio of
- 0.03≤X/(In+Ga+Sn+X)≤0.25 (8).
3 more elements
Dependencies are inferred from the claim text.