Thin film transistor, method for manufacturing the same, and display device

A method for manufacturing a thin film transistor, comprising:

• providing a base substrate;
• forming an active layer on a side of the base substrate, wherein the active layer comprises an active layer body and a through-hole in a center of the active layer body;
• forming a gate electrode on a same side of the base substrate as the active layer, wherein the gate electrode is insulated and spaced apart from the active layer body and disposed to surround the through-hole;
• and
• forming a first electrode and a second electrode both located on a side of the gate electrode distal to the base substrate, wherein the first electrode and the second electrode are insulated and spaced apart from each other, both coupled to the active layer body, and insulated and spaced apart from the gate electrode,
• wherein at least a portion of an orthographic projection of the first electrode on the active layer is within the through-hole;
• and
• an orthographic projection of the second electrode on the active layer surrounds the active layer body.