Charge carrier transport facilitated by strain
AssigneeInternational Business Machines Corporation
InventorsAnirban Basu, Guy M. Cohen
Life of this patent
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Abstract
A semiconductor structure and formation thereof. The semiconductor structure has a semiconductor channel region composed of a first semiconductor material that (i) is epitaxial with and (ii) is lattice-matched with a second semiconductor material. The semiconductor structure has, at a first end of the semiconductor channel region, a first source/drain region composed of a third semiconductor material that is lattice-mismatched to both the first semiconductor material and the second semiconductor material.
Claims20
A method of forming a semiconductor structure comprising:
- forming a semiconductor channel region from a first semiconductor material that (i) is epitaxial with and (ii) is lattice-matched with a second semiconductor material;
- and
- forming, at a first end of the semiconductor channel region, a first source/drain region from a third semiconductor material that is lattice-mismatched to both the first semiconductor material and the second semiconductor material.
A semiconductor structure comprising:
- a semiconductor channel region composed of a first semiconductor material that (i) is epitaxial with and (ii) is lattice-matched with a second semiconductor material;
- and
- at a first end of the semiconductor channel region, a first source/drain region composed of a third semiconductor material that is lattice-mismatched to both the first semiconductor material and the second semiconductor material.
Dependencies are inferred from the claim text.