Ic product comprising a novel insulating gate separation structure for transistor devices

An integrated circuit product, comprising:

• a first final gate structure having a first end surface;
• a second final gate structure having a second end surface;
• and
• an insulating gate separation structure positioned between said first and second final gate structures, said insulating gate separation structure comprising first and second side surfaces that are opposite one another, wherein said first end surface contacts said first side surface of said insulating gate separation structure and said second end surface contacts said second side surface of said insulating gate separation structure, and wherein a bottom portion of said insulating gate separation structure has a first portion that is positioned vertically under a portion of said first final gate structure and a second portion that is positioned vertically under a portion of said second final gate structure.

An integrated circuit product, comprising:

• a first transistor device that comprises a first final gate structure having a first end surface;
• a second transistor device that comprises a second final gate structure having a second end surface;
• and
• an insulating gate separation structure positioned between said first and second final gate structures, said insulating gate separation structure comprising first and second side surfaces that are opposite one another, wherein said first end surface contacts said first side surface of said insulating gate separation structure and said second end surface contacts said second side surface of said insulating gate separation structure, wherein said insulating gate separation structure comprises an upper portion and a bottom portion, the upper portion being positioned above the bottom portion, wherein said bottom portion of said insulating gate separation structure has a first dimension in a gate width direction of said first transistor device and said upper portion of said insulating gate separation structure has a second dimension in the gate width direction of said first transistor device, wherein said first dimension is greater than said second dimension.