Semiconductor structure and manufacturing method for same

Abstract

The present disclosure provides a semiconductor structure and a manufacturing method for the semiconductor structure. The semiconductor structure manufactured according to the manufacturing method provided in the present disclosure comprises a substrate and a gate formed on the substrate, and a silicon epitaxial layer is formed on the substrate at two sides of the gate; and a side surface of the gate is provided with a first side wall, with a gap being provided between the first side wall and the silicon epitaxial layer, and a surface of the first side wall further comprises a second side wall, with the second side wall covering the gap, so that there is an air gap between the first side wall and the silicon epitaxial layer.

Dependencies are inferred from the claim text.