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US 2019/0378904 A1Published application
Controlling dimensions of a negative capacitance layer of a gate stack of a field-effect transistor (fet) to increase power density
AssigneeQUALCOMM Incorporated
InventorsBin Yang, Ye Lu, Lixin Ge
Life of this patent
Estimating the term…
Abstract
A Field-Effect Transistor (FET) with a negative capacitance layer to increase power density provides a negative capacitor connected in series with a conventional positive capacitor. The dimensions of the negative capacitor are controlled to allow the difference in capacitances between the negative capacitor and the positive capacitor to approach zero, which in turn provides a large total capacitance. The large total capacitance provides for increased power density.
Claims21
A Field-Effect Transistor (FET), comprising:
- a substrate including a source region, a drain region, and a channel region between the source region and the drain region;
- a source over and coupled to the source region;
- a drain over and coupled to the drain region;
- and
- a gate stack over the channel region, the gate stack comprising:
- a gate;
- a gate electrode having a first length between a first spacer and a second spacer;
- a negative capacitance layer below the gate electrode, the negative capacitance layer having a second length less than the first length;
- and
- an insulation layer below the negative capacitance layer and over the channel region.
7 more elements
A Field-Effect Transistor (FET), comprising:
- a substrate including a source region, a drain region, and a channel region between the source region and the drain region;
- a means for providing electrical current over and coupled to the source region;
- a means for receiving electrical current over and coupled to the drain region;
- and
- a gate stack over the channel region, the gate stack comprising:
- a gate;
- a gate electrode having a first length between a first spacer and a second spacer;
- a negative capacitance layer below the gate electrode, the negative capacitance layer having a second length less than the first length;
- and
- a means for insulating below the negative capacitance layer and over the channel region.
7 more elements
21-30. (canceled)
Dependencies are inferred from the claim text.