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US 2019/0378897 A1Published application
Method for manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorKohei MIKI
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor substrate; a buffer layer provided on the semiconductor substrate; a GaN channel layer provided on the buffer layer; an AlGaN electron travel layer provided on the GaN channel layer; a GaN cap layer provided on the AlGaN electron travel layer, having a nitrogen polarity, and on which a plurality of recesses are formed; and a gate electrode, a source electrode and a drain electrode provided in each of the plurality of recesses.
Claims4
A method for manufacturing a semiconductor device comprising:
- forming a buffer layer, a GaN channel layer, an AlGaN electron travel layer and a GaN cap layer with a nitrogen polarity in order on a semiconductor substrate;
- using the AlGaN electron travel layer as an etching stop layer and etching the GaN cap layer using KOH to form a plurality of recesses;
- and
- forming a gate electrode, a source electrode and a drain electrode in each of the plurality of recesses.
1 more element
Dependencies are inferred from the claim text.