Synapse array

Abstract

A synapse crossbar array device is provided. The synapse crossbar array device includes a plurality of Indium-Gallium-Zinc-Oxide (IGZO) thin film transistors (TFTs) and a plurality of IGZO resistive synapses. Each IGZO resistive synapse includes a IGZO resistive layer, a first electrical contact electrically coupled to one of the plurality of IGZO TFTs and a second electrical contact electrically connected to one of a plurality of column connection lines. The first electrical contact and the second electrical contact of each IGZO resistive synapse are disposed on the IGZO resistive layer of the resistive synapse. The synapse crossbar array device includes IGZO resistive synapses that have, each of them, an established resistance value. The synapse crossbar array may be fully transparent and may be integrated into the displays with which portable devices are provided.

Dependencies are inferred from the claim text.