Three dimensional memory arrays

A method of forming a memory array, comprising:

• forming a plurality of stacks and a plurality of first dielectric materials so that each respective stack and each respective first dielectric material alternate, wherein forming each respective stack comprises forming a storage material, a first conductive material on the storage material, a second dielectric material on the storage material adjacent to the first conductive material and passing through the plurality of first dielectric materials, and a third dielectric material between the first conductive material and the second dielectric material so that the storage material is on only one side of the third dielectric material and the third dielectric material is in direct physical contact with the first conductive material and the second dielectric material;
• and
• forming a second conductive material through the plurality of stacks and the plurality of first dielectric materials so that the second dielectric material in each respective stack is between the second conductive material and the third dielectric material and is in direct physical contact with the second conductive material.