Semiconductor device, manufacturing method thereof, and electronic apparatus

A light detecting device, comprising:

• a first semiconductor section including a first semiconductor substrate and a first multilayer wiring layer, the first semiconductor substrate including a plurality of photodiodes and a plurality of transistors;
• a second semiconductor section including a second semiconductor substrate and a second multilayer wiring layer, the first and second semiconductor sections being secured together with a bonding layer between the first and second multilayer wiring layer such that the first and second multilayer wiring layers of the first and second semiconductor sections face each other;
• a first conductor extending through the first semiconductor section and the bonding layer to a first portion of the second multilayer wiring layer of the second semiconductor section and electrically interconnecting a wiring of the first multilayer wiring layer with a wiring of the second multilayer wiring layer;
• a second conductor extending through the first semiconductor section and the bonding layer to a second portion of the second multilayer wiring layer of the second semiconductor section and electrically interconnecting the wiring of the second multilayer wiring layer with an external wire;
• and
• a first insulation region disposed through the first semiconductor substrate in a vertical direction, wherein the first insulation region, a first portion of the first semiconductor substrate, and the first conductor are disposed in a horizontal direction in this order.

An apparatus comprising:

• a light detecting device comprising:
• a first semiconductor section including a first multilayer wiring layer at one side thereof, the first semiconductor section further including a plurality of pixel units arranged in a two-dimensional array, and each pixel unit of the plurality of pixel units including a photodiode and at least one transistor;
• a second semiconductor section including a second multilayer wiring layer at one side thereof, the first and second semiconductor sections being secured together with a bonding layer between the first and second multilayer wiring layer such that the first and second multilayer wiring layer of the first and second semiconductor sections face each other;
• a first conductor extending through the first semiconductor section and the bonding layer to a first portion of the second multilayer wiring layer of the second semiconductor section and electrically interconnecting a wiring of the first multilayer wiring layer with a wiring of the second multilayer wiring layer;
• and
• a second conductor extending through the first semiconductor section and the bonding layer to a second portion of the second multilayer wiring layer of the second semiconductor section and electrically interconnecting the wiring of the second multilayer wiring with an external wire,
• wherein the first portion and the second portion of the second multilayer wiring layer are disposed at a same layer;
• and
• at least one lens disposed above the imaging device.