Memory field-effect transistors and methods of manufacturing the same

An apparatus, comprising:

• a substrate comprising a semiconductor material;
• a gate insulator of a memory field-effect transistor within a trench having walls defined by spacers and a base defined by the substrate, wherein the gate insulator comprises a ferroelectric material;
• and
• a gate conductor on the gate insulator, the ferroelectric gate insulator to separate a bottom surface of the gate conductor and the substrate.

A memory field-effect transistor, comprising:

• a substrate comprising a semiconductor material;
• a gate conductor having a bottom surface facing the substrate and lateral surfaces extending away from the substrate;
• and
• a ferroelectric material separating the gate conductor from the substrate, a thickness of the ferroelectric material being greater along the bottom surface of the gate conductor than along the lateral surfaces of the gate conductor.