Orientation engineering in complementary metal oxide semiconductor fin field effect transistor integration for increased mobility and sharper junction

A method of forming a semiconductor device comprising:

• forming a plurality of fin structures from a silicon containing semiconductor substrate having a (110) plane orientation, wherein said fin structures have a length in a <110> direction and a sidewall along the (100) plane;
• converting at least one of the fin structures to germanium containing type fin structures, wherein at least one remaining of the fin structures is germanium free;
• forming gate structures on channel region portions of said germanium containing type fin structures and the fin structures that are germanium free;
• forming N-type epitaxial semiconductor material having rectangular growth on the sidewalls having the (100) plane of the fin structures that are germanium free on opposing sides of the channel region;
• and
• forming P-type epitaxial semiconductor material having rectangular growth is on the sidewalls having the (100) plane of the germanium containing type fin structure on opposing sides of the channel region.