Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a plurality of active fins on a substrate extending in a first direction;
• first and second gate structures spaced apart from each other in the first direction and extending on the substrate in a second direction crossing the plurality of active fins;
• a source/drain region in a region of the plurality of active fins, which is not covered by the first and second gate structures;
• an interlayer insulating layer covering the source/drain region around the first and second gate structures;
• and
• an inter-gate cutting layer traversing the first and second gate structures and the interlayer insulating layer in the first direction,
• wherein the first and second gate structures each comprise a spacer comprising a multilayer material layer on two side surfaces thereof,
• wherein the number of material layers of the spacer provided at the inter-gate cutting layer is less than the number of material layers of the spacer provided at the first and second gate structures,
• wherein a level of a bottom surface of the inter-gate cutting layer at a region cutting the first and second gate structures is lower than a level of a bottom surface of the inter-gate cutting layer in the interlayer insulating layer.

A method of manufacturing a semiconductor device, the method comprising:

• forming a plurality of active regions extending on a substrate in a first direction, and a device isolating layer defining the plurality of active regions;
• forming a dummy gate structure comprising a dummy gate pattern and a spacer, and extending on the device isolating layer in a second direction while crossing the plurality of active regions;
• forming a source/drain region at a region of the plurality of active regions, which is exposed at two sides of the dummy gate structure;
• forming an interlayer insulating layer covering the device isolating layer and the source/drain region around the dummy gate structure;
• forming an empty space extending in the second direction between the spacer by removing the dummy gate pattern;
• forming a gate structure comprising a gate electrode and the spacer by filling the empty space with a metal material to form the gate electrode;
• removing a part of the spacer;
• and
• cutting the gate electrode by removing a region where a side surface of the gate electrode is exposed when the spacer is removed within the gate electrode.