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US 2019/0378835 A1Published application
Power module with mosfet body diode on which energization test can be conducted efficiently
AssigneeMitsubishi Electric Corporation
InventorsSeiya SUGIMACHI, Masataka SHIRAMIZU
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Abstract
A power module includes a first MOS transistor and a first Schottky barrier diode for a lower arm, and a second MOS transistor and a second Schottky barrier diode for an upper arm. In one embodiment, one positive-side power supply terminal and one negative-side power supply terminal are provided, while an output terminal to which the first and second MOS transistors are connected and an output terminal to which the first and second Schottky barrier diodes are connected are provided as separate output terminals.
Claims10
A power module comprising:
- a casing;
- a first terminal, a second terminal, a third terminal, and a fourth terminal, each being fixed to the casing and connectable to an outside;
- a first MOS (Metal Oxide Semiconductor) transistor contained in the casing, connected between the first terminal and the second terminal, and having a forward direction from the second terminal to the first terminal;
- a second MOS transistor contained in the casing, connected between the second terminal and the third terminal, and having a forward direction from the third terminal to the second terminal;
- a first Schottky barrier diode contained in the casing, having an anode connected to the first terminal, and having a cathode connected to the fourth terminal;
- and
- a second Schottky barrier diode contained in the casing, having a cathode connected to the third terminal, and having an anode connected to the fourth terminal,
- no other diode, except for respective body diodes of the first MOS transistor and the second MOS transistor, being connected to the second terminal.
5 more elements
A power module comprising:
- a casing;
- a first terminal, a second terminal, a third terminal, a fourth terminal, and a fifth terminal, each being fixed to the casing and connectable to an outside;
- a first MOS transistor contained in the casing, connected between the first terminal and the second terminal, and having a forward direction from the second terminal to the first terminal;
- a second MOS transistor contained in the casing, connected between the second terminal and the third terminal, and having a forward direction from the third terminal to the second terminal;
- a first Schottky barrier diode contained in the casing, having a cathode connected to the second terminal, and having an anode connected to the fourth terminal;
- and
- a second Schottky barrier diode contained in the casing, having an anode connected to the second terminal, and having a cathode connected to the fifth terminal.
4 more elements
Dependencies are inferred from the claim text.