Intelligent diode structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Feng CHANG, Jam-Wem LEE, Li-Wei CHU, Po-Lin PENG
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Feng CHANG, Jam-Wem LEE, Li-Wei CHU, Po-Lin PENG
Estimating the term…
The present disclosure describes exemplary configurations and arrangements for various intelligent diodes. The intelligent diodes of the present disclosure can be implemented as part of electrostatic discharge protection circuitry to protect other electronic circuitry from the flow of electricity caused by electrostatic discharge events. The electrostatic discharge protection circuitry dissipates one or more unwanted transient signals which result from the electrostatic discharge event. In some situations, some carrier electrons and/or carrier holes can flow from intelligent diodes of the present disclosure into a semiconductor substrate. The exemplary configurations and arrangements described herein include various regions designed collect these carrier electrons and/or carrier holes to reduce the likelihood these carrier electrons and/or carrier holes cause latch-up of the other electronic circuitry.
A diode, comprising:
A diode, comprising:
An integrated circuit, comprising:
Dependencies are inferred from the claim text.