Bandgap reference diode using thin film transistors

An integrated circuit (IC) device comprising:

• a conductive line of a metallization layer, the conductive line comprising a first portion and a second portion;
• a gate over the first portion of the conductive line;
• a thin film transistor over the gate, the thin film transistor comprising a semiconductor material;
• and
• a drain over the thin film transistor, the drain electrically coupled to the second portion of the conductive line.

A method for fabricating an interconnect structure for an integrated circuit, the method comprising:

• forming a conductive line in a metallization layer, the conductive line comprising a first portion and a second portion;
• forming a gate over the first portion of the conductive line;
• forming a first layer over the gate, the first layer comprising a semiconductor material;
• and
• forming a drain over the first layer, the drain electrically coupled to the second portion of the conductive line.