Power module comprising a housing which is formed in levels

A power module (1, 30), comprising

• at least one power semiconductor (4, 34, 35),
• at least one further electronic component (20, 48, 49, 17, 50), and
• a housing, which is formed by a shaped body and which is formed by an encapsulation compound (12, 13),
• wherein the housing is formed in at least first and second levels (2, 3, 31, 32), and the at least one power semiconductor component (4, 34, 35) is arranged in the first level (3, 31), and the at least one further electronic component (20, 48, 49, 17, 50) is arranged in the second level (2), at least one electrically conductive layer forming an electrically conductive connection structure (18, 19, 24, 51, 52, 53, 54) being formed on a surface (26) of an inner interface (25), extending between the first and second levels (2, 3), of the power module, said layer being applied onto the surface (26), the at least one further electronic component (20, 48, 49, 17, 50) being electrically conductively connected to the connection structure (18, 19, 24, 51, 52, 53, 54), the power semiconductor component (4, 34, 35) in the first level (3, 31) being electrically connected to the further component in the second level (2) by the connection structure (18, 19, 24, 51, 52, 53, 54).