Method of manufacturing semiconductor devices and corresponding semiconductor device

A device, comprising:

• a package including:
• a semiconductor die;
• a stud bump coupled to the semiconductor die;
• a first layer of molding compound on a surface of the die and along a side surface of the stud bump, wherein the first layer of molding compound is a laser-activatable direct structure compound, wherein a portion of the laser-activatable direct structure compound has been actuated to form an activated portion, the activated portion forming a recess in the first layer of molding compound at a distal end of the stud bump;
• and
• a conductive material in the recess and electrically coupled to the activated portion and the stud bump.

A semiconductor package, comprising:

• a semiconductor die;
• a plurality of stud bumps coupled to the semiconductor die;
• a first layer of molding compound on a surface of the die and along side surfaces of the plurality of stud bumps, wherein the first layer of molding compound is a laser-activatable direct structure compound;
• a laser activated area on the first layer of molding compound at the plurality of stud bumps;
• and
• a conductive material on the laser activated area.